Andreas Fissel

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H.Jörg OstenLeibniz University HannoverVerified email at mbe.uni-hannover.de
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
Ute KaiserHead of group, full professor, Central Facility for Electron Microscopy, Ulm UniversityVerified email at uni-ulm.de
Malte CzernohorskyFraunhofer IPMS-CNTVerified email at ipms.fraunhofer.de
Friedhelm BechstedtProfessor für Festkörpertheorie, Friedrich Schiller Universität JenaVerified email at ifto.physik.uni-jena.de
Ayan Roy ChaudhuriAssociate Professor, Indian Institute of Technology KharagpurVerified email at matsc.iitkgp.ac.in
Jan KrügenerLeibniz Universität HannoverVerified email at mbe.uni-hannover.de
Jaroslaw DabrowskiIHPVerified email at ihp-microelectronics.com
Jürgen FurthmüllerFriedrich-Schiller-Universität JenaVerified email at uni-jena.de
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHVerified email at eld.rwth-aachen.de
Tim EchtermeyerUniversity of ManchesterVerified email at manchester.ac.uk
Colin HumphreysQueen Mary University of LondonVerified email at qmul.ac.uk
Rüdiger GoldhahnProfessor, Otto-von-Guericke UniversityVerified email at ovgu.de
Ranjith RIndian Institute of Technology HyderabadVerified email at iith.ac.in
Andrey ChuvilinCIC nanoGUNEVerified email at nanogune.eu
Robby PeibstInstitut für Materialien und Bauelemente der Elektronik, Leibniz Universität Hannover (Professor), sowie Institut für Solarenergieforschung Hameln/Emmerthal (ISFH) (Gruppenleiter)Verified email at mbe.uni-hannover.de
Christian BoitProfessor für Halbleiterbauelemente, TU BerlinVerified email at tu-berlin.de
Aimo WinkelmannAGH University of Science and TechnologyVerified email at agh.edu.pl
Joerg R. JinschekTechnical University of Denmark, DTU NanolabVerified email at dtu.dk
Pini ShekhterNanotechnology Center, Tel-Aviv UniversityVerified email at tauex.tau.ac.il

Andreas Fissel

Leibniz University Hannover, Institute of Electronic Materials and Devices

Verified email at mbe.uni-hannover.de - Homepage

Molecular beam epitaxy Silicon Carbide Rare earth oxides surface science


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Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy A Fissel, B Schröter, W Richter Applied Physics Letters 66 (23), 3182-3184, 1995	291	1995
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties A Fissel Physics Reports 379 (3), 149-255, 2003	251	2003
Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001) A Fissel, J Dabrowski, HJ Osten Journal of Applied Physics 91 (11), 8986-8991, 2002	131	2002
Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon A Fissel, Z Elassar, O Kirfel, E Bugiel, M Czernohorsky, HJ Osten Journal of Applied Physics 99 (7), 074105, 2006	127	2006
Thermodynamic considerations of the epitaxial growth of SiC polytypes A Fissel Journal of Crystal Growth 212 (3-4), 438-450, 2000	125	2000
Impact of oxygen supply during growth on the electrical properties of crystalline Gd₂O₃ thin films on Si(001) M Czernohorsky, E Bugiel, HJ Osten, A Fissel, O Kirfel Applied physics letters 88 (15), 152905, 2006	120	2006
MBE growth and properties of SiC multi-quantum well structures A Fissel, U Kaiser, B Schröter, W Richter, F Bechstedt Applied Surface Science 184 (1), 37-42, 2001	116	2001
Introducing crystalline rare‐earth oxides into Si technologies HJ Osten, A Laha, M Czernohorsky, E Bugiel, R Dargis, A Fissel physica status solidi (a) 205 (4), 695-707, 2008	106	2008
Epitaxial praseodymium oxide: a new high-k dielectric HJ Osten, E Bugiel, A Fissel MRS Proceedings 744, 15-24, 2002	102	2002
Epitaxial Praseodymium Oxide: A New High-K Dielectric HJ Osten, E Bugiel, J Dabrowski, A Fissel, T Guminskaya, JP Liu, ... Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 …, 2001	94	2001
Epitaxial growth of SiC thin films on Si-stabilized α-SiC(0001) at low temperatures by solid-source molecular beam epitaxy A Fissel, U Kaiser, E Ducke, B Schröter, W Richter Journal of Crystal Growth 154 (1-2), 72-80, 1995	89	1995
Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide A Fissel, HJ Osten, E Bugiel Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003	87	2003
Influence of interface layer composition on the electrical properties of epitaxial Gd₂O₃ thin films for high-K application A Laha, HJ Osten, A Fissel Applied Physics Letters 90 (11), 113508, 2007	85	2007
Investigation of the electronic structure at interfaces of crystalline and amorphous Gd₂O₃ thin layers with silicon substrates of different orientations M Badylevich, S Shamuilia, VV Afanasev, A Stesmans, A Laha, HJ Osten, ... Applied physics letters 90 (25), 252101, 2007	73	2007
Impact of Si substrate orientations on electrical properties of crystalline Gd₂O₃ thin films for high-K application A Laha, HJ Osten, A Fissel Applied Physics Letters 89 (14), 143514, 2006	73	2006
Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC A Fissel, B Schröter, U Kaiser, W Richter Applied Physics Letters 77 (15), 2418-2420, 2000	71	2000
CMOS integration of epitaxial Gd₂O₃ high-k gate dielectrics HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, ... Solid-state electronics 50 (6), 979-985, 2006	64	2006
0.86-CET Gate Stack With Epitaxial Gd₂O₃ High-k Dielectrics and FUSI NiSi Metal Electrode HDB Gottlob, T Echtermeyer, M Schmidt, T Mollenhauer, JK Efavi, ... IEEE Electron Device Letters 27 (10), 814-816, 2006	58*	2006
Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application A Laha, E Bugiel, HJ Osten, A Fissel Applied physics letters 88 (17), 172107, 2006	57	2006
On the nature of the D₁-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy A Fissel, W Richter, J Furthmuller, F Bechstedt Applied Physics Letters 78 (17), 2512-2514, 2001	55	2001

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