Thirumaleshwara N Bhat

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Mahesh KUMARProfessor, Indian Institute of Technology JodhpurVerified email at iitj.ac.in
S.B. KrupanidhiIndian institute of scienceVerified email at mrc.iisc.ernet.in
Basanta RoulSenior Researcher at Central Research Laboratory-BEL and Materials Research Centre-IIScVerified email at iisc.ac.in
Mohana RajpalkeSenior Researcher at Microsoft, CopenhagenVerified email at microsoft.com
Sudhiranjan TripathyAgency for Science, Technology, and Research (A*STAR-IMRE, Singapore)Verified email at imre.a-star.edu.sg
Dr. L M KukrejaRaja Ramanna Centre for Advanced TechnologyVerified email at rrcat.gov.in
Dr. Pankaj MisraRaja Ramanna Centre for Advanced Technology & Homi Bhabha National Institute, Indore, INDIAVerified email at rrcat.gov.in
Dr. Milan Kumar BeraAssoc. Prof. MMDU, Mullana, Haryana, JSPS Postdoc Fellow, Govt. of Japan, TitechVerified email at mmumullana.org
Dr. KUMUD RANJANNTU, SingaporeVerified email at e.ntu.edu.sg
Subramaniam ArulkumaranTemasek Laboratories@NTU, Nanyang Technological UniversityVerified email at ntu.edu.sg
Nitesh KumarS. N. Bose National Centre for Basic SciencesVerified email at bose.res.in
Sundaresan AthinarayananProfessor in Chemistry and Physics of Materials Unit, JNCASRVerified email at jncasr.ac.in
MANOJ KUMAR CHANDRA MOHANChonnam National University, South KoreaVerified email at ntu.edu.sg
Dr. B.K. PandeyUniversity of Allahabad, Material Research Centre, Indian Institute of Science, BangloreVerified email at mrc.iisc.ernet.in
Ajay Kumar Kushwaha (Ph.D.),Head of Department & Associate Professor, MEMS, IIT IndoreVerified email at iiti.ac.in
Sudip K. BatabyalProfessor, Department of Science, Amrita Vishwa VidyapeethamVerified email at cb.amrita.edu
Goutam Kumar DalapatiCEO-SunkonnectVerified email at sunkonnect.co
Saeid Masudy-PanahSingapore-MIT Alliance for Research and TechnologyVerified email at e.ntu.edu.sg
Charanjit Singh BhatiaNational University of SingaporeVerified email at nus.edu.sg
Reuben YeoInstitute of Materials Research and Engineering, A*STAR, SingaporeVerified email at imre.a-star.edu.sg

Thirumaleshwara N Bhat

Department of materials science Mangalore university-India

Verified email at mangaloreuniversity.ac.in

III-Nitrides Materials and Devices


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Binary group III-nitride based heterostructures: band offsets and transport properties B Roul, M Kumar, MK Rajpalke, TN Bhat, SB Krupanidhi Journal of Physics D: Applied Physics 48 (42), 423001, 2015	78	2015
Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate A Nigam, TN Bhat, S Rajamani, SB Dolmanan, S Tripathy, M Kumar AIP Advances 7 (8), 2017	70	2017
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films B Roul, MK Rajpalke, TN Bhat, M Kumar, AT Kalghatgi, SB Krupanidhi, ... Applied Physics Letters 99 (16), 2011	54	2011
Sputter grown sub-micrometer thick Cu2ZnSnS4 thin film for photovoltaic device application GK Dalapati, SK Batabyal, S Masudy-Panah, Z Su, A Kushwaha, TI Wong, ... Materials Letters 160, 45-50, 2015	52	2015
Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring A Nigam, N Goel, TN Bhat, MT Rahman, SB Dolmanan, Q Qiao, ... Sensors and Actuators B: Chemical 309, 127832, 2020	43	2020
MPA-GSH functionalized AlGaN/GaN high-electron mobility transistor-based sensor for cadmium ion detection A Nigam, TN Bhat, VS Bhati, SB Dolmanan, S Tripathy, M Kumar IEEE Sensors Journal 19 (8), 2863-2870, 2019	34	2019
Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si S Arulkumaran, K Ranjan, GI Ng, J Kennedy, PP Murmu, TN Bhat, ... Journal of Vacuum Science & Technology B 34 (4), 2016	33	2016
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction M Kumar, TN Bhat, MK Rajpalke, B Roul, AT Kalghatgi, SB Krupanidhi Nanoscale research letters 6, 1-6, 2011	30	2011
Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE M Kumar, B Roul, TN Bhat, MK Rajpalke, P Misra, LM Kukreja, N Sinha, ... Materials Research Bulletin 45 (11), 1581-1585, 2010	29	2010
Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy TN Bhat, MK Rajpalke, B Roul, M Kumar, SB Krupanidhi Journal of Applied Physics 110 (9), 2011	28	2011
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes B Roul, MK Rajpalke, TN Bhat, M Kumar, N Sinha, AT Kalghatgi, ... Journal of Applied Physics 109 (4), 044502-044502-5, 2011	27	2011
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE M Kumar, MK Rajpalke, TN Bhat, B Roul, N Sinha, AT Kalghatgi, ... Materials letters 65 (9), 1396-1399, 2011	26	2011
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ... Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015	23	2015
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ... Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015	23	2015
Droplet epitaxy of InN quantum dots on Si (111) by RF plasma-assisted molecular beam epitaxy M Kumar, B Roul, TN Bhat, MK Rajpalke, N Sinha, AT Kalghatgi, ... Advanced Science Letters 3 (4), 379-384, 2010	23	2010
InxAl1-xN/AlN/GaN high electron mobility transistor structures on 200 mm diameter Si (111) substrates with Au-free device processing S Tripathy, LM Kyaw, SB Dolmanan, YJ Ngoo, Y Liu, MK Bera, SP Singh, ... ECS Journal of Solid State Science and Technology 3 (5), Q84, 2014	22	2014
Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy M Kumar, TN Bhat, MK Rajpalke, B Roul, P Misra, LM Kukreja, N Sinha, ... Bulletin of Materials Science 33, 221-226, 2010	22	2010
Atomic scale interface manipulation, structural engineering, and their impact on ultrathin carbon films in controlling wear, friction, and corrosion N Dwivedi, RJ Yeo, LJK Yak, N Satyanarayana, C Dhand, TN Bhat, ... ACS Applied Materials & Interfaces 8 (27), 17606-17621, 2016	21	2016
Determination of MBE grown wurtzite GaN/Ge₃N₄/Ge heterojunctions band offset by X‐ray photoelectron spectroscopy M Kumar, MK Rajpalke, B Roul, TN Bhat, AT Kalghatgi, SB Krupanidhi physica status solidi (b) 249 (1), 58-61, 2012	21	2012
Comparison of the Al_xGa_1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates WH Tham, DS Ang, LK Bera, SB Dolmanan, TN Bhat, VKX Lin, S Tripathy IEEE transactions on electron devices 63 (1), 345-352, 2015	19	2015

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