Mechanical characteristics of stainless steel under low temperature environment JH Hong, DM Keum, DS Han, IB Park, MS Chun, KW Ko, JM Lee Journal of the Society of Naval Architects of Korea 45 (5), 530-537, 2008 | 24 | 2008 |
Cumulative impacts of proton irradiation on the self-heating of AlGaN/GaN HEMTs B Chatterjee, D Shoemaker, Y Song, T Shi, HL Huang, D Keum, ... ACS Applied Electronic Materials 2 (4), 980-991, 2020 | 17 | 2020 |
Image sensor for compensating for signal difference between pixels TS Jung, DM Keum, BS Kim, JS Kim, JH Park, M Jang US Patent 10,341,595, 2019 | 15 | 2019 |
Proton bombardment effects on normally-off AlGaN/GaN-on-Si recessed MISHeterostructure FETs DM Keum, HY Cha, H Kim IEEE Transactions on nuclear science 62 (6), 3362-3368, 2015 | 15 | 2015 |
Energy-dependent degradation characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV proton irradiation D Keum, H Kim ECS Journal of Solid State Science and Technology 7 (9), Q159, 2018 | 13 | 2018 |
Degradation characteristics of normally-off p-AlGaN gate AlGaN/GaN HEMTs with 5 MeV proton irradiation DM Keum, H Sung, H Kim IEEE Transactions on Nuclear Science 64 (1), 258-262, 2016 | 13 | 2016 |
World first mass productive 0.8㎛ pixel size image sensor with new optical isolation technology to minimize optical loss for high sensitivity Y Lee, J Park, B Kim, J Kim, H Yoo, S Nah, D Park, T Lee, B Kim, D Keum, ... IISW, 2019 | 9 | 2019 |
Image sensor for compensating for signal difference between pixels TS Jung, DM Keum, BS Kim, JS Kim, JH Park, M Jang US Patent App. 17/008,797, 2020 | 5 | 2020 |
Image sensor for compensating for signal difference between pixels TS Jung, DM Keum, BS Kim, JS Kim, JH Park, M Jang US Patent 10,819,929, 2020 | 5 | 2020 |
Design of oceanography buoy-part II: mooring system DM Keum, TW Kim, DS Han, WB Lee, JM Lee Journal of Ocean Engineering and Technology 23 (1), 89-95, 2009 | 5 | 2009 |
Proton-irradiation effects on charge trapping-related instability of normally-off AlGaN/GaN recessed MISHFETs D Keum, H Kim JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19 (2), 214-219, 2019 | 4 | 2019 |
Degradation characteristics of AlGaN/GaN MOS-heterostructure FETs by alpha-particle irradiation D Keum, G Cho, H Kim ECS Journal of Solid State Science and Technology 6 (11), S3030, 2017 | 4 | 2017 |
Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure … D Keum, H Kim Micromachines 10 (11), 723, 2019 | 3 | 2019 |
Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs D Keum, H Kim Cryogenics 93, 51-55, 2018 | 3 | 2018 |
Design of Oceanography Buoy-Part I: Structural Integrity of Hull TW Kim, DM Keum, DS Han, WB Lee, JM Lee Journal of Ocean Engineering and Technology 23 (1), 81-88, 2009 | 3 | 2009 |
Image sensor including auto-focus pixels T Lee, K Dongmin, B Kim, J Kim, J Park, K Lee, LEE Dongkyu, YK Lee US Patent App. 17/507,374, 2022 | 2 | 2022 |
Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors DM Keum, S Choi, Y Kang, JG Lee, HY Cha, H Kim JSTS: Journal of Semiconductor Technology and Science 14 (5), 682-687, 2014 | 1 | 2014 |
Image sensor J Yeaju, K Dongmin, K Lee, B Kim, J Kim, YK Lee US Patent App. 18/221,736, 2024 | | 2024 |
Pixel array of image sensor and method of manufacturing the same K Dongmin, T Kim, B Kim, J Park, K Lee, YK Lee US Patent 11,869,913, 2024 | | 2024 |
Image sensor for compensating for signal difference between pixels TS Jung, DM Keum, BS Kim, JS Kim, JH Park, M Jang US Patent 11,843,882, 2023 | | 2023 |