| Transient enhanced diffusion of arsenic in silicon S Solmi, M Ferri, M Bersani, D Giubertoni, V Soncini Journal of applied physics 94 (8), 4950-4955, 2003 | 96 | 2003 |
| Depth profile characterization of ultra shallow junction implants P Hönicke, B Beckhoff, M Kolbe, D Giubertoni, J van den Berg, G Pepponi Analytical and bioanalytical chemistry 396, 2825-2832, 2010 | 70 | 2010 |
| P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation M Posselt, B Schmidt, W Anwand, R Grötzschel, V Heera, A Mücklich, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 68 | 2008 |
| Investigation on indium diffusion in silicon S Solmi, A Parisini, M Bersani, D Giubertoni, V Soncini, G Carnevale, ... Journal of Applied Physics 92 (3), 1361-1366, 2002 | 58 | 2002 |
| Arsenic uphill diffusion during shallow junction formation M Ferri, S Solmi, A Parisini, M Bersani, D Giubertoni, M Barozzi Journal of Applied Physics 99 (11), 2006 | 57 | 2006 |
| Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ... Applied physics letters 89 (19), 2006 | 50 | 2006 |
| Combined evaluation of grazing incidence X-ray fluorescence and X-ray reflectivity data for improved profiling of ultra-shallow depth distributions D Ingerle, F Meirer, G Pepponi, E Demenev, D Giubertoni, ... Spectrochimica Acta Part B: Atomic Spectroscopy 99, 121-128, 2014 | 41 | 2014 |
| Vacancy-engineering implants for high boron activation in silicon on insulator AJ Smith, NEB Cowern, R Gwilliam, BJ Sealy, B Colombeau, EJH Collart, ... Applied physics letters 88 (8), 2006 | 37 | 2006 |
| Hydrogen diffusion in R Trotta, D Giubertoni, A Polimeni, M Bersani, M Capizzi, F Martelli, ... Physical Review B 80 (19), 195206, 2009 | 35 | 2009 |
| Interphase exchange coupling in Fe∕ Sm–Co bilayers with gradient Fe thickness M Yu, J Hattrick-Simpers, I Takeuchi, J Li, ZL Wang, JP Liu, SE Lofland, ... Journal of applied physics 98 (6), 2005 | 33 | 2005 |
| Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI JJ Hamilton, EJH Collart, B Colombeau, C Jeynes, M Bersani, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005 | 33 | 2005 |
| Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass … G Pepponi, C Streli, P Wobrauschek, N Zoeger, K Luening, P Pianetta, ... Spectrochimica Acta Part B: Atomic Spectroscopy 59 (8), 1243-1249, 2004 | 32 | 2004 |
| Diffusion and electrical activation of indium in silicon S Scalese, M Italia, A La Magna, G Mannino, V Privitera, M Bersani, ... Journal of applied physics 93 (12), 9773-9782, 2003 | 30 | 2003 |
| Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon D Giubertoni, G Pepponi, S Gennaro, M Bersani, MA Sahiner, SP Kelty, ... journal of applied physics 104 (10), 2008 | 29 | 2008 |
| Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕ SiO2 interface JJ Hamilton, NEB Cowern, JA Sharp, KJ Kirkby, EJH Collart, ... Applied physics letters 89 (4), 2006 | 28 | 2006 |
| Correlation between silicon‐nitride film stress and composition: XPS and SIMS analyses L Vanzetti, M Barozzi, D Giubertoni, C Kompocholis, A Bagolini, P Bellutti Surface and Interface Analysis: An International Journal devoted to the …, 2006 | 27 | 2006 |
| Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS L Lobo, B Fernández, R Pereiro, N Bordel, E Demenev, D Giubertoni, ... Journal of Analytical Atomic Spectrometry 26 (3), 542-549, 2011 | 25 | 2011 |
| Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink JJ Hamilton, KJ Kirkby, NEB Cowern, EJH Collart, M Bersani, ... Applied Physics Letters 91 (9), 2007 | 23 | 2007 |
| Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon G Pepponi, D Giubertoni, M Bersani, F Meirer, D Ingerle, G Steinhauser, ... Journal of Vacuum Science & Technology B 28 (1), C1C59-C1C64, 2010 | 22 | 2010 |
| A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers D Ingerle, F Meirer, N Zoeger, G Pepponi, D Giubertoni, G Steinhauser, ... Spectrochimica Acta Part B: Atomic Spectroscopy 65 (6), 429-433, 2010 | 21 | 2010 |
