| Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition SAR Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana ... Apl materials 8 (2), 021111, 2020 | 64 | 2020 |
| Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization P Murkute, H Ghadi, S Saha, SK Pandey, S Chakrabarti Materials Science in Semiconductor Processing 66, 1-8, 2017 | 40 | 2017 |
| Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020 | 34 | 2020 |
| Emerging material zinc magnesium oxide based nanorods: Growth process optimization and sensor application towards humidity detection P Murkute, H Ghadi, S Patil, H Rawool, S Pandey, S Chakrabarti Sensors and Actuators B: Chemical 256, 204-216, 2018 | 33 | 2018 |
| Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition D Panda, A Balgarkashi, S Shetty, H Ghadi, B Tongbram, S Chakrabarti Materials Science in Semiconductor Processing 60, 40-44, 2017 | 31 | 2017 |
| Monitoring soil pH variation using Polyaniline/SU-8 composite film based conductometric microsensor S Patil, H Ghadi, N Ramgir, A Adhikari, VR Rao Sensors and Actuators B: Chemical 286, 583-590, 2019 | 30 | 2019 |
| A detailed study of the effects of rapid thermal annealing on the luminescence properties of InAs sub-monolayer quantum dots A Manohar, S Sengupta, H Ghadi, S Chakrabarti Journal of Luminescence 158, 149-152, 2015 | 30 | 2015 |
| Inversion of activity in DSSC for TiO2 and ZnO photo-anodes depending on the choice of sensitizer and carrier dynamics J Patwari, S Shyamal, T Khan, H Ghadi, C Bhattacharya, S Chakrabarti, ... Journal of Luminescence 207, 169-176, 2019 | 24 | 2019 |
| Evidence of quantum dot size uniformity in strain-coupled multilayered In (Ga) As/GaAs QDs grown with constant overgrowth percentage D Panda, A Ahmad, H Ghadi, S Adhikary, B Tongbram, S Chakrabarti Journal of Luminescence 192, 562-566, 2017 | 24 | 2017 |
| The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers S Shetty, S Adhikary, B Tongbram, A Ahmad, H Ghadi, S Chakrabarti Journal of Luminescence 158, 231-235, 2015 | 24 | 2015 |
| One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers H Ghadi, A Agarwal, S Adhikary, J Agawane, A Mandal, S Chakrabarti, ... Thin Solid Films 566, 1-4, 2014 | 21 | 2014 |
| Detailed investigation of photoluminescence, structural, and elemental properties of ZnO thin films under various annealing ambient P Murkute, H Ghadi, S Sreedhara, S Chakrabarti Superlattices and Microstructures 136, 106310, 2019 | 20 | 2019 |
| More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−) A Mandal, A Agarwal, H Ghadi, G Kumari KC, A Basu, ... Applied Physics Letters 102 (5), 2013 | 20 | 2013 |
| Effects of phosphorus implantation time on the optical, structural, and elemental properties of ZnO thin films and its correlation with the 3.31-eV peak P Murkute, S Sushama, H Ghadi, S Saha, S Chakrabarti Journal of Alloys and Compounds 768, 800-809, 2018 | 19 | 2018 |
| Role of Pzn-2Vzn centre on the luminescence properties of phosphorus doped ZnO thin films by varying doping concentration P Murkute, S Vatsa, H Ghadi, S Saha, S Chakrabarti Journal of Luminescence 200, 120-125, 2018 | 19 | 2018 |
| Indigenous development of 320× 256 focal-plane array using InAs/InGaAs/GaAs quantum dots-in-a-well infrared detectors for thermal imaging KCG Kumari, H Ghadi, DRM Samudraiah, S Chakrabarti Current Science, 1568-1573, 2017 | 19 | 2017 |
| The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures D Das, H Ghadi, B Tongbram, SM Singh, S Chakrabarti Journal of Luminescence 192, 277-282, 2017 | 18 | 2017 |
| Optimization of the number of stacks in the submonolayer quantum dot heterostructure for infrared photodetectors D Das, H Ghadi, S Sengupta, A Ahmad, A Manohar, S Chakrabarti IEEE Transactions on Nanotechnology 15 (2), 214-219, 2016 | 18 | 2016 |
| Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors B Tongbram, S Shetty, H Ghadi, S Adhikary, S Chakrabarti Applied Physics A 118, 511-517, 2015 | 18 | 2015 |
| Enhancing responsivity and detectivity in broadband UV–VIS photodetector by ex-situ UV–ozone annealing technique MJ Alam, P Murkute, H Ghadi, S Sushama, SMMD Dwivedi, A Ghosh, ... Superlattices and Microstructures 137, 106333, 2020 | 17 | 2020 |
Subhananda (Subho) ChakrabartiProfessor, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
