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Dr. Hemant Ghadi
Dr. Hemant Ghadi
Verified email at osu.edu
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Cited by
Year
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
SAR Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana ...
Apl materials 8 (2), 021111, 2020
532020
Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization
P Murkute, H Ghadi, S Saha, SK Pandey, S Chakrabarti
Materials Science in Semiconductor Processing 66, 1-8, 2017
392017
Emerging material zinc magnesium oxide based nanorods: Growth process optimization and sensor application towards humidity detection
P Murkute, H Ghadi, S Patil, H Rawool, S Pandey, S Chakrabarti
Sensors and Actuators B: Chemical 256, 204-216, 2018
322018
Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition
D Panda, A Balgarkashi, S Shetty, H Ghadi, B Tongbram, S Chakrabarti
Materials Science in Semiconductor Processing 60, 40-44, 2017
302017
A detailed study of the effects of rapid thermal annealing on the luminescence properties of InAs sub-monolayer quantum dots
A Manohar, S Sengupta, H Ghadi, S Chakrabarti
Journal of Luminescence 158, 149-152, 2015
272015
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
H Ghadi, JF McGlone, Z Feng, AFMAU Bhuiyan, H Zhao, AR Arehart, ...
Applied Physics Letters 117 (17), 172106, 2020
242020
Monitoring soil pH variation using Polyaniline/SU-8 composite film based conductometric microsensor
S Patil, H Ghadi, N Ramgir, A Adhikari, VR Rao
Sensors and Actuators B: Chemical 286, 583-590, 2019
222019
The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
S Shetty, S Adhikary, B Tongbram, A Ahmad, H Ghadi, S Chakrabarti
Journal of Luminescence 158, 231-235, 2015
222015
Inversion of activity in DSSC for TiO2 and ZnO photo-anodes depending on the choice of sensitizer and carrier dynamics
J Patwari, S Shyamal, T Khan, H Ghadi, C Bhattacharya, S Chakrabarti, ...
Journal of Luminescence 207, 169-176, 2019
202019
Evidence of quantum dot size uniformity in strain-coupled multilayered In (Ga) As/GaAs QDs grown with constant overgrowth percentage
D Panda, A Ahmad, H Ghadi, S Adhikary, B Tongbram, S Chakrabarti
Journal of Luminescence 192, 562-566, 2017
202017
One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
H Ghadi, A Agarwal, S Adhikary, J Agawane, A Mandal, S Chakrabarti, ...
Thin Solid Films 566, 1-4, 2014
202014
More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H)
A Mandal, A Agarwal, H Ghadi, G Kumari KC, A Basu, ...
Applied Physics Letters 102 (5), 051105, 2013
202013
Effects of phosphorus implantation time on the optical, structural, and elemental properties of ZnO thin films and its correlation with the 3.31-eV peak
P Murkute, S Sushama, H Ghadi, S Saha, S Chakrabarti
Journal of Alloys and Compounds 768, 800-809, 2018
182018
Role of Pzn-2Vzn centre on the luminescence properties of phosphorus doped ZnO thin films by varying doping concentration
P Murkute, S Vatsa, H Ghadi, S Saha, S Chakrabarti
Journal of Luminescence 200, 120-125, 2018
182018
Optimization of the number of stacks in the submonolayer quantum dot heterostructure for infrared photodetectors
D Das, H Ghadi, S Sengupta, A Ahmad, A Manohar, S Chakrabarti
IEEE Transactions on Nanotechnology 15 (2), 214-219, 2016
182016
The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures
D Das, H Ghadi, B Tongbram, SM Singh, S Chakrabarti
Journal of Luminescence 192, 277-282, 2017
172017
Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
B Tongbram, S Shetty, H Ghadi, S Adhikary, S Chakrabarti
Applied Physics A 118, 511-517, 2015
172015
Indigenous development of 320 256 focal-plane array using InAs/InGaAs/GaAs quantum dots-in-a-well infrared detectors for thermal imaging
KCG Kumari, H Ghadi, DRM Samudraiah, S Chakrabarti
Current Science, 1568-1573, 2017
162017
Ultrasensitive zinc magnesium oxide nanorods based micro-sensor platform for UV detection and light trapping
H Ghadi, P Murkute, A Ghosh, SMMD Dwivedi, A Mondal, S Chakrabarti
Sensors and Actuators A: Physical 278, 127-139, 2018
152018
Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modification
H Ghadi, N Sehara, P Murkute, S Chakrabarti
Superlattices and Microstructures 105, 117-131, 2017
152017
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