Ignacio Iñiguez-de-la-Torre
Ignacio Iñiguez-de-la-Torre
Profesor Titular de Universidad (Salamanca)
Verified email at - Homepage
Cited by
Cited by
Phonon black-body radiation limit for heat dissipation in electronics
J Schleeh, J Mateos, I Íñiguez-de-la-Torre, N Wadefalk, PA Nilsson, ...
Nature materials 14 (2), 187-192, 2015
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 2013
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ...
Semiconductor science and technology 22 (6), 663, 2007
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre, J Mateos, T González, ...
Journal of Applied Physics 111 (11), 2012
Comparative Monte Carlo analysis of InP-and GaN-based gunn diodes
S García, S Pérez, I Íñiguez-De-La-Torre, J Mateos, T González
Journal of Applied Physics 115 (4), 2014
Monte Carlo analysis of noise spectra in self-switching nanodiodes
I Iñiguez–de-la-Torre, J Mateos, D Pardo, T González
Journal of applied physics 103 (2), 2008
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre, P Nouvel, L Varani, P Sangaré, ...
IEEE Transactions on Electron Devices 63 (1), 353-359, 2015
Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations
S García, I Íñiguez-de-la-Torre, J Mateos, T González, S Pérez
Semiconductor Science and Technology 31 (6), 065005, 2016
Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
JF Millithaler, I Íñiguez-de-la-Torre, A Iñiguez-de-la-Torre, T González, ...
Applied Physics Letters 104 (7), 2014
Noise and terahertz rectification linked by geometry in planar asymmetric nanodiodes
I Iñiguez-De-La-Torre, J Mateos, D Pardo, AM Song, T González
Applied Physics Letters 94 (9), 2009
A study of geometry effects on the performance of ballistic deflection transistor
V Kaushal, I Iñiguez-de-La-Torre, H Irie, G Guarino, WR Donaldson, ...
IEEE Transactions on Nanotechnology 9 (6), 723-733, 2010
Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
S García, I Iñiguez-De-La-Torre, S Pérez, J Mateos, T González
Journal of Applied Physics 114 (7), 2013
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
A Westlund, P Sangaré, G Ducournau, I Iñiguez-de-la-Torre, PÅ Nilsson, ...
Solid-State Electronics 104, 79-85, 2015
Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature
I Íñiguez-de-la-Torre, T González, D Pardo, C Gardès, Y Roelens, ...
Semiconductor Science and Technology 25 (12), 125013, 2010
Nonlinear nanochannels for room temperature terahertz heterodyne detection
J Torres, P Nouvel, A Penot, L Varani, P Sangaré, B Grimbert, M Faucher, ...
Semiconductor science and technology 28 (12), 125024, 2013
Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb
I Iñiguez-De-La-Torre, H Rodilla, J Mateos, D Pardo, AM Song, ...
Journal of Physics: Conference Series 193 (1), 012082, 2009
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
H Sánchez-Martín, S Sánchez-Martín, I Íñiguez-De-La-Torre, S Pérez, ...
Semiconductor Science and Technology 33 (9), 095016, 2018
Experiences on the design, creation, and analysis of multimedia content to promote active learning
R Rengel, E Pascual, I Íñiguez-de-la-Torre, MJ Martín, BG Vasallo
Journal of Science Education and Technology 28, 445-451, 2019
Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions
I Iñiguez-de-la-Torre, T González, D Pardo, C Gardès, Y Roelens, ...
Journal of Applied Physics 105 (9), 2009
Hysteresis phenomena in nanoscale rectifying diodes: A Monte Carlo interpretation in terms of surface effects
I Iñiguez-de-la-Torre, T González, D Pardo, J Mateos
Applied Physics Letters 91 (6), 2007
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