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Shubhadeep Bhattacharjee
Shubhadeep Bhattacharjee
Electrical Engineering, Indian Institute of Technology (IIT), Hyderabad
Verified email at ee.iith.ac.in - Homepage
Title
Cited by
Cited by
Year
Interfacial ferroelectricity in marginally twisted 2D semiconductors
A Weston, EG Castanon, V Enaldiev, F Ferreira, S Bhattacharjee, S Xu, ...
Nature nanotechnology 17 (4), 390-395, 2022
1582022
High-Performance HfO2Back Gated Multilayer MoS2Transistors
KL Ganapathi, S Bhattacharjee, S Mohan, N Bhat
IEEE Electron Device Letters 37 (6), 797-800, 2016
782016
Surface State Engineering of Metal/MoS2Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability
S Bhattacharjee, KL Ganapathi, DN Nath, N Bhat
IEEE Transactions on Electron Devices 63 (6), 2556-2562, 2016
642016
Insights into Multilevel Resistive Switching in Monolayer MoS2
S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ...
ACS applied materials & interfaces 12 (5), 6022-6029, 2020
612020
Out-of-equilibrium criticalities in graphene superlattices
AI Berdyugin, N Xin, H Gao, S Slizovskiy, Z Dong, S Bhattacharjee, ...
Science 375 (6579), 430-433, 2022
542022
A sub-thermionic MoS2 FET with tunable transport
S Bhattacharjee, KL Ganapathi, S Mohan, N Bhat
Applied Physics Letters 111 (16), 2017
362017
Emulating synaptic response in n- and p-channel MoS2 transistors by utilizing charge trapping dynamics
S Bhattacharjee, R Wigchering, HG Manning, JJ Boland, PK Hurley
Scientific reports 10 (1), 12178, 2020
292020
Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs
S Bhattacharjee, KL Ganapathi, H Chandrasekar, T Paul, S Mohan, ...
Advanced Electronic Materials 3 (1), 1600358, 2017
252017
Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2FET
S Bhattacharjee, KL Ganapathi, DN Nath, N Bhat
IEEE Electron Device Letters 37 (1), 119-122, 2015
232015
Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality
J Lin, S Monaghan, N Sakhuja, F Gity, RK Jha, EM Coleman, J Connolly, ...
2D Materials 8 (2), 025008, 2020
222020
Early detection of breast cancer: synthesis and characterization of novel target specific NIR-fluorescent estrogen conjugate for molecular optical imaging
I Jose, KD Deodhar, UB Desai, S Bhattacharjee
Journal of fluorescence 21, 1171-1177, 2011
162011
Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation
G Mirabelli, LA Walsh, F Gity, S Bhattacharjee, CP Cullen, C Ó Coileáin, ...
ACS omega 4 (17), 17487-17493, 2019
122019
Gallium selenide nanoribbons on silicon substrates for photodetection
P Hauchecorne, F Gity, M Martin, H Okuno, S Bhattacharjee, J Moeyaert, ...
ACS Applied Nano Materials 4 (8), 7820-7831, 2021
92021
Optical-phonon-limited high-field transport in layered materials
H Chandrasekar, KL Ganapathi, S Bhattacharjee, N Bhat, DN Nath
IEEE Transactions on Electron Devices 63 (2), 767-772, 2015
92015
Two-dimensional materials and their role in emerging electronic and photonic devices
C O'Dwyer, LA Walsh, F Gity, S Bhattacharjee, PK Hurley
The Electrochemical Society Interface 27 (4), 53, 2018
72018
Early detection of Breast Cancer: A Molecular Optical Imaging approach using novel estrogen conjugate fluorescent dye
S Bhattacharjee, I Jose
Optical Tomography and Spectroscopy of Tissue IX 7896, 286-300, 2011
72011
Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2
S Bhattacharjee, R Vatsyayan, KL Ganapathi, P Ravindra, S Mohan, ...
Advanced Electronic Materials 5 (6), 1800863, 2019
62019
Interface engineering of high-k dielectrics and metal contacts for high performance top-gated MoS2 FETs
S Bhattacharjee, KL Ganapathi, S Mohan, N Bhat
ECS Transactions 80 (1), 101, 2017
52017
Adaptive Transport in High Performance (Ion), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS2 Transistors
S Bhattacharjee, KL Ganapathi, DG Sharma, A Sharma, S Mohan, N Bhat
IEEE Transactions on Nanotechnology 18, 1071-1078, 2019
22019
Optoelectronics based on Vertical Transport in Multi-layer MoS2
S Bhattacharjee, P Biswas, S Solanke, R Muralidharan, D Nath, N Bhat
2018 76th Device Research Conference (DRC), 1-2, 2018
12018
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