Mamidala Jagadesh Kumar
Title
Cited by
Cited by
Year
Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
A Chaudhry, MJ Kumar
IEEE Transactions on Device and Materials Reliability 4 (1), 99-109, 2004
3422004
Doping-less tunnel field effect transistor: Design and investigation
MJ Kumar, S Janardhanan
IEEE transactions on Electron Devices 60 (10), 3285-3290, 2013
3412013
Novel attributes of a dual material gate nanoscale tunnel field-effect transistor
S Saurabh, MJ Kumar
IEEE transactions on Electron Devices 58 (2), 404-410, 2010
3142010
Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs
MJ Kumar, A Chaudhry
IEEE Transactions on Electron Devices 51 (4), 569-574, 2004
2772004
A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation
GV Reddy, MJ Kumar
IEEE Transactions on Nanotechnology 4 (2), 260-268, 2005
2522005
Controlling ambipolar current in tunneling FETs using overlapping gate-on-drain
DB Abdi, MJ Kumar
IEEE Journal of the Electron Devices Society 2 (6), 187-190, 2014
1802014
Bipolar charge-plasma transistor: a novel three terminal device
MJ Kumar, K Nadda
IEEE Transactions on Electron Devices 59 (4), 962-967, 2012
1502012
Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET
A Chaudhry, MJ Kumar
IEEE Transactions on Electron Devices 51 (9), 1463-1467, 2004
1382004
Impact of strain on drain current and threshold voltage of nanoscale double gate tunnel field effect transistor: Theoretical investigation and analysis
S Saurabh, MJ Kumar
Japanese Journal of Applied Physics 48 (6R), 064503, 2009
1202009
In-Built N+Pocket p-n-p-n Tunnel Field-Effect Transistor
DB Abdi, MJ Kumar
IEEE Electron Device Letters 35 (12), 1170-1172, 2014
962014
Compact analytical model of dual material gate tunneling field-effect transistor using interband tunneling and channel transport
R Vishnoi, MJ Kumar
IEEE Transactions on Electron Devices 61 (6), 1936-1942, 2014
872014
New dual-material SG nanoscale MOSFET: analytical threshold-voltage model
MJ Kumar, AA Orouji, H Dhakad
IEEE transactions on Electron Devices 53 (4), 920-922, 2006
832006
Compact analytical threshold-voltage model of nanoscale fully depleted strained-Si on silicon–germanium-on-insu lator (SGOI) MOSFETs
V Venkataraman, S Nawal, MJ Kumar
IEEE Transactions on Electron Devices 54 (3), 554-562, 2007
822007
Controlling the drain side tunneling width to reduce ambipolar current in tunnel FETs using heterodielectric BOX
S Sahay, MJ Kumar
IEEE transactions on electron devices 62 (11), 3882-3886, 2015
772015
Profile design considerations for minimizing base transit time in SiGe HBT's
VS Patri, MJ Kumar
IEEE Transactions on Electron Devices 45 (8), 1725-1731, 1998
751998
Fundamentals of tunnel field-effect transistors
S Saurabh, MJ Kumar
CRC press, 2016
742016
Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions
MJ Kumar, AA Orouji
IEEE Transactions on Electron Devices 52 (7), 1568-1575, 2005
712005
Dielectric-modulated impact-ionization MOS transistor as a label-free biosensor
N Kannan, MJ Kumar
IEEE electron device letters 34 (12), 1575-1577, 2013
672013
Compact analytical drain current model of gate-all-around nanowire tunneling FET
R Vishnoi, MJ Kumar
IEEE Transactions on Electron Devices 61 (7), 2599-2603, 2014
652014
Extended- Stepped Gate LDMOS for Improved Performance
MJ Kumar, R Sithanandam
Electron Devices, IEEE Transactions on 57 (7), 1719-1724, 2010
642010
The system can't perform the operation now. Try again later.
Articles 1–20