| A Tunnel FET forScaling Below 0.6 V With a CMOS-Comparable Performance R Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR Rao IEEE Transactions on Electron Devices 58 (7), 1855-1863, 2011 | 195 | 2011 |
| Physical insight toward heat transport and an improved electrothermal modeling framework for FinFET architectures M Shrivastava, M Agrawal, S Mahajan, H Gossner, T Schulz, DK Sharma, ... IEEE Transactions on Electron Devices 59 (5), 1353-1363, 2012 | 116 | 2012 |
| A review on the ESD robustness of drain-extended MOS devices M Shrivastava, H Gossner IEEE Transactions on Device and Materials Reliability 12 (4), 615-625, 2012 | 92 | 2012 |
| Part I: Physical insight into carbon-doping-induced delayed avalanche action in GaN buffer in AlGaN/GaN HEMTs V Joshi, SP Tiwari, M Shrivastava IEEE Transactions on Electron Devices 66 (1), 561-569, 2018 | 70 | 2018 |
| A comprehensive computational modeling approach for AlGaN/GaN HEMTs V Joshi, A Soni, SP Tiwari, M Shrivastava IEEE Transactions on Nanotechnology 15 (6), 947-955, 2016 | 64 | 2016 |
| A roadmap for disruptive applications and heterogeneous integration using two-dimensional materials: State-of-the-art and technological challenges M Shrivastava, V Ramgopal Rao Nano letters 21 (15), 6359-6381, 2021 | 60 | 2021 |
| Part I: Mixed-signal performance of various high-voltage drain-extended MOS devices M Shrivastava, MS Baghini, H Gossner, VR Rao IEEE transactions on electron devices 57 (2), 448-457, 2009 | 60 | 2009 |
| Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD–RON Tradeoff and RF PA Performance A Soni, M Shrivastava IEEE Transactions on Electron Devices 67 (4), 1718-1725, 2020 | 57 | 2020 |
| A novel bottom spacer FinFET structure for improved short-channel, power-delay, and thermal performance M Shrivastava, MS Baghini, DK Sharma, VR Rao IEEE Transactions on Electron Devices 57 (6), 1287-1294, 2010 | 57 | 2010 |
| Fin enabled area scaled tunnel FET K Hemanjaneyulu, M Shrivastava IEEE Transactions on Electron Devices 62 (10), 3184-3191, 2015 | 56 | 2015 |
| High voltage semiconductor devices M Shrivastava, MS Baghini, CC Russ, H Gossner, R Rao US Patent 8,664,720, 2014 | 50 | 2014 |
| Toward system on chip (SoC) development using FinFET technology: Challenges, solutions, process co-development & optimization guidelines M Shrivastava, R Mehta, S Gupta, N Agrawal, MS Baghini, DK Sharma, ... IEEE Transactions on Electron Devices 58 (6), 1597-1607, 2011 | 48 | 2011 |
| A novel and robust approach for common mode feedback using IDDG FinFET M Shrivastava, MS Baghini, AB Sachid, DK Sharma, VR Rao IEEE Transactions on Electron Devices 55 (11), 3274-3282, 2008 | 48 | 2008 |
| Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ... IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019 | 40 | 2019 |
| Part II: Proposals to independently engineer donor and acceptor trap concentrations in GaN buffer for ultrahigh breakdown AlGaN/GaN HEMTs V Joshi, SP Tiwari, M Shrivastava IEEE Transactions on Electron Devices 66 (1), 570-577, 2018 | 40 | 2018 |
| Record low metal—(CVD) graphene contact resistance using atomic orbital overlap engineering A Meersha, HB Variar, K Bhardwaj, A Mishra, S Raghavan, N Bhat, ... 2016 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2016 | 38 | 2016 |
| Sub 0.5 V operation of performance driven mobile systems based on area scaled tunnel FET devices A Rajoriya, M Shrivastava, H Gossner, T Schulz, VR Rao IEEE transactions on electron devices 60 (8), 2626-2633, 2013 | 37 | 2013 |
| A novel drain-extended FinFET device for high-voltage high-speed applications M Shrivastava, H Gossner, VR Rao IEEE Electron Device Letters 33 (10), 1432-1434, 2012 | 35 | 2012 |
| Part II: On the three-dimensional filamentation and failure modeling of STI type DeNMOS device under various ESD conditions M Shrivastava, H Gossner, MS Baghini, VR Rao IEEE transactions on electron devices 57 (9), 2243-2250, 2010 | 35 | 2010 |
| Part I: On the unification of physics of quasi-saturation in LDMOS devices BS Kumar, M Shrivastava IEEE Transactions on Electron Devices 65 (1), 191-198, 2017 | 32 | 2017 |
